Present Position : Professor and Director
Office address : University Science Instrumentation Centre,
Jawaharlal Nehru University
New Delhi - 110 067 (India).
Telephone (Office) : 011 - 26185903 PABX: 26167557, 26107676 Ext. 4758
Fax Number (O) : 011 - 26165886
E. Mail (O) : email@example.com / firstname.lastname@example.org
Telephone (R) : 91-011-26137748
SUMMARY OF RESEARCH EXPERIENCE:
Posses more than 23 years of diverse experience in teaching , R&D , Defence R& D, Educational planning /management and co-ordination , personnel administration and project evaluation. Promoting new ideas/vision/strategies. Expert in developing new technical know-how, process improvements and identification of patentable technologies and processes with academic and industrial interest in Intellectual property Rights.
EDUCATIONAL QUALIFICATIONS :
Ph.D.* 1987 Punjabi University, Patiala
M.Phil. 1981 Punjabi University, Patiala
M.Sc. 1979 Punjabi University, Patiala
B.Sc. 1977 Kurukshetra University,Kurukshetra
Cert. in French 1982 Punjabi University, Patiala
2000 (Feb)- onward Professor and Director USIC JNU New Delhi
1994(Dec) -1997(June) Advisor AICTE New Delhi
1994(July) - 1994(Dec) Director AICTE New Delhi
1990(April) - 1993(Dec) Associate Professor and Head USIC JNU New Delhi
1990(Jan) - 1990(March) Associate Professor USIC JNU New Delhi
1987(Sept) - 1989 (Dec) Scientist 'B' DRDO Min. of Defence SSPL Delhi
1982(Dec) - 1987(Sept) Lecturer in Physics SA Jain College Ambala City
1980(July) - 1982 (Nov) Research Fellow Nuclear Science Labs. Patiala
FELLOWSHIP / MEMBERSHIP OF PRESTIGIOUS SOCIETIES / ASSOCIATIONS :
1. Fellow, Institution of Engineers ( India )
2. Fellow, Institution of Electronics & Telecommunication Engineers (India)
3. Member, Materials Research Society of India
4. Member (Life), Instrument Society of India
5. Member, International Radiation Physics Society
6. Member (Life), Indian Society for Radiation Physics
7. Member (Life), Indian Society for Technical Education
PROFESSIONAL EXPERIENCE :
Total (Teaching/ Research & Development/ Technology
Management/ Educational Planning &
Academic Administration) : Twenty one years
AWARDS / PRIZES AND HONOURS :
a) National Ishan Award in recognition of outstanding contributions towards development of management education in India
b) Meritorious work award for the year 1988 as Scientist 'B' in Ministry of Defence, Solid State Physics Laboratory, Delhi-54.
c) University Merit Scholarship award during M.Sc. studies at Punjabi University, Patiala - 147002.
d) University Gold Medal for University Oil Painting Competition
e) Several other awards and prizes in extracurricular activities .
Number of research publications : 25
Number of general/popular
science publications : 5
Books / Monograms
A text book on " Microwave Engineering" co-authored with Prof. Ajay Sharma of REC Jalandhar has been published.
A book of poems " Tumhare Liye" including the collection of non-professional poets/students of JNU has been published.
Another book on "Electronic Instrumentation for Research" is under process.
A Text book on "Television Engineering" co-autored with Prof. Ajay Sharma of REC Jalandhar has been published.
A book titled " Electronics and Communication Engineering FAQ" is under print
OTHER SKILLS AND ABILITIES
Possess intense scientific temper & inclination towards designing and developing new apparatuses and instruments, and rectifying related problems. Accepting challenging independent research work in versatile areas. Engineering drawing and designing new equipment and solving unsolved problems of science and technology and trying to solve mysteries are of interest..
Participated in various activities like Photography, Science Quiz, Painting, Dramatics, Poetry etc. and won several prizes therein. A silver medal in paper reading and a Gold Medal in University level oil competition have been awarded.
Pencil sketching, Oil Painting, Poetry and Writing on scientific and other subjects.
English, Hindi, Punjabi and French
WORK EXPERIENCE IN ALL INDIA COUNCIL FOR TECHNICAL EDUCATION
As Director ( Board of Studies ) in the AICTE , I was responsible for the planning, co-ordinating and monitoring the overall activities of the bureau of Board of Studies, All India Boards, formulation of academic policies of Council.
As Adviser ( Recognition & Accreditation) and bureau head I was responsible for the overall activities of the Bureau , majority of which included the work related to the recognition of various programmes in technical education in co-ordination with other concerned agencies such as MHRD, UPSC, AIU etc.
As Member Secretary of National Board of Accreditation (NBA) of AICTE ( a statutory Board under AICTE act 1987) and looked after its all secretarial activities of the NBA. During this tenure as Member Secretary of NBA developed the criteria for accreditation for various programmes In Engineering and Technology, Pharmacy, Architecture and Management and devised the mechanism for academic evaluation of approved programmes for relative quality ranking through accreditation process.
As Adviser (Management, Computers & PG programmes) handled the work related to Management Education, Computer Education and Post Graduate programmes other then Engineering & Technology.
As Advisor ( VIP, Parliament and Networking) I handled the work related to the VIP, Parliament besides networking, installation , maintenance and installation of internet facilities in the council.
WORK EXPERIENCE IN JNU
As Director , University Science Instrumentation Centre, developed collaborative research programmes for design & development of scientific instruments to impart training in the scientific instrumentation and other allied technologies to the technical staff, research students as required for their research work. Extended the instrumentation services and related facilities to various research and teaching laboratories of the University. Designed & developed several test and measuring devices and the prototypes of new instruments and equipment for research and commercial applications. Designed new academic programmes for the students of the university. Took part in teaching and research of instrumentation and related subjects at post-graduate and doctoral level.
DETAIL OF RESEARCH EXPERIENCE
Possess more than nineteen years of experience of independent research and development in the field of electronic and mechanical instrumentation, electronic material characterisation and experimental physics. The areas of work include original research work in the fields of Photon induced atomic inner-shell vacancy creation and de-excitation processes; Characterisation of materials using optical methods, Deep level transient spectroscopy, C-V,C-T measurements and carrier life time measurements; Processing of electronic materials like GaAs,Si and MCT and their Surface passivation using anodic oxidation; Development of indigenous instrumentation needed for all above types of work. The separate details about the above research work are given below.
WORK ON PHOTON –INDUCED ATOMIC INNER-SHELL X-RAYS
The experimental measurements on the photon induced atomic-inner-shell vacancies and emitted fluorescent X-rays have been made. The parameters like differential and total X-ray production cross-sections, relative x-ray peak intensities; sub-shell radiative decay rates; fluorescence yields of LIII sub-shell /M-shell are measured .The angular distribution of fluorescent X-rays to investigate their anisotropy have also been measured. The measurements of above parameters are of great importance on account of their numerous applications in the fields of radiation physics, atomic physics, nuclear physics, solid state physics, plasma physics, astrophysics and non-destructive testing of samples of biological, geological, archaeological and technological interests. The topic wise description of above work are as under.
X-RAY PRODUCTION CROSS-SECTIONS
The partial L shell x-ray production cross-sections with 59.57 keV photon excitation are measured in elements with atomic number 73 ? Z ? 92. The measurements have been made in a 90? reflection geometry with 241Am as source of 59.57 keV gamma rays. The measured cross-sections are also compared with the theoretical calculations in the form of relative intensities I(L? )/I(L?), I(L? )/I(L? ) and I(L? )/I(L? ). The results have been interpreted in terms of photo-ionisation cross-sections, fluorescence yields, Coster-Kronig transition probabilities and radiative decay rates.
ENERGY DEPENDENCE OF L-SHELL X-RAY RELATIVE INTENSITIES
The energy dependence of L shell x-ray relative intensities of some high 'Z' elements has also been investigated in the photon energy region of 14 ? E ? 44 keV. The external conversion K x-rays of elements in the region 37 ?Z ? 64 induced by 60 keV photons from 1 curie 241Am source in a double reflection geometry. The results of such measurements are compared with the calculated values using the sub-shell photo-ionisation cross-sections, fluorescence yield and radiative and non-radiative decay rates. It has been established from above results that unlike K shell, the L shell relative intensities are not independent of photon energy.
THE LIII SUB-SHELL DECAY RATES
The LIII sub-shell relative radiative decay rates in Pb Th and U by selective ionisation of LIII sub-shell are also measured. The technique of selective ionisation using radioactive sources has been used for the first time to determine above decay rates. As no other experimental data for LIII sub-shell radiative decay rates are available, the measured values are only compared with the theoretical values and found to show a good agreement.
ANISOTROPY OF PHOTON INDUCED X-RAYS
The experiments are carried out to investigate the theoretical prediction of Flugge et al (1972)about the anisotropic emission of radiation from the states with J?1/2 .The measurements of sub-shell relative intensities of resolved peaks are made at emission angle varying from 60o to 150o at 10o intervals. The above measurements have revealed for the first time that x-rays originating from the states J?1/2 (e.g.LIII sub-shell J=3/2) and falling under L? and L? peaks show an anisotropic angular distribution. However, the peak L? and L? do not show any measurable anisotropy. These results, though in conformity with the predictions of Flugge et al (1972) cannot be compared with other results as no other experimental or theoretical data are available.
M –SHELL FLOURESCENT YIELDS
The average M shell fluorescence yields have also been measured for some high 'Z' elements. The M-Shell vacancies are produced by photo ionisation with 5.597 keV Mn X-rays emitted from 55Fe radioactive source. The values of measured M-shell x-ray production cross-sections are used to determine using the theoretical values of M-shell photo ionisation cross-sections from Scofield (1973). The results are compared with other data wherever available and in some cases the calculations for are made from the available theoretical data. It is also observed that the average fluorescence yields are independent of initial vacancy distribution among its sub-shells.
RESEARCH WORK IN THE FIELD OF CHARACTERISATION OF SEMICONDUCTOR MATERIALS
The research work related to the characterisation of semiconductor electronic materials has been conducted at, Solid State Physics Laboratories, Ministry of Defence, Delhi - 110054. During my stay there the work was done in the following areas. (Most of which is classified)
MINORITY CARRIER LIFETIME MEASUREMENTS
The minority carrier life time measurements were performed in wide range of semiconductor materials like Germanium, Silicon, Gallium Arsenide, Cadmium Telluride and Mercury Cadmium Telluride. The photo-conductive decay method was used for the preliminary characterisation of the solid state electronic materials developed at the laboratory. The electronic and mechanical equipment was set up for above purpose and several types of measurements were made.
FOURIER TRANSFORM UV-VIS-IR SPECTROSCOPY
The characterisation of above mentioned materials was also carried out using Fourier Transform Spectrometer in UV, visible and IR regions. The materials were tested for their transmittance in the specific wavelength regions of interest. This characterisation was routinely done for the samples developed in the laboratory. The Biorad digital FT-Spectrometer was used for these investigations. The use of Carry-14 spectrometer was also made for some measurements.
The C-V, C-T measurements were made in various types of semiconductor materials like Si, Ge, GaAs, CdTe, HgCdTe etc. for their characterisation. The samples of the materials grown in the laboratory by different processes like LPE, VPE, MBE, & MOCVD etc. by other working groups, were generally characterised. The MOS structures were prepared on the material surfaces after etching, polishing and cleaning by standard processes. The oxide coatings of known thickness were deposited and aluminium, indium, silver or gold gate contacts were deposited using vacuum evaporation. The schematic study of samples for C-V and C-T measurements was carried out over a wide temperature range from 77oK to 400oK. These measurements were made on Biorad DL-4600 system with built-in cryostat temperature controller and C-V, C-T measurement facility at 1 MHz frequency. The results have been used in classified defence projects.
DEEP LEVEL TRANSIENT SPECTROSCOPY
The deep level impurities \ traps play very important role in determining the suitability of material and the device performance. The characterisation of these defects thus assumes great significance in material development. The one of the techniques to do so is by means of deep level transient spectroscopy which offers various advantages over the other available techniques. The EL2 defects in GaAs were (in particular) investigated for the GaAs ingots developed at Solid State Physics Lab. The material samples were prepared in the form of MOS structures and were investigated for deep level defects by Biorad DL-4600 DLTS unit. The samples of GaAs, Si, Ge and MCT were studied. The devices in the form of diodes, LED, solar cells etc. were also used as samples to characterise the deep traps.
PASSIVATION OF MCT
The MCT wafers were characterised for their suitability for fabrication of IR detector devices like linear arrays and CCDs. For this purpose the raw MCT crystals grown in the lab. were processed and MOS structures were fabricated after growing an oxide film (100 - 500 A degree thick) by anodic oxidation process. The gate structures were grown by vacuum evaporation of In, Ag, Al and Au and the passivated MCT wafers were characterised for their suitability for making IR devices.
CHARACTERISATION OF a-Si:H SOLAR CELLS
The hydrogenated amorphous silicon solar cells were characterised by CV,CT and DLTS methods for their intrinsic properties and their performances before and after annealing. The MOS structures using SiO2 film were used for the characterisation.
RESEARCH WORK ON ION-INDUCED ATOMIC INNER-SHELL PROCESSES
The availability of high energy ion beams from a 15-UD pelletron at Nuclear Science Centre is being used for some experimental investigations of atomic inner-shell excitation and de-excitation processes. The investigations of K, L, and M-shell ionisation by heavy ion beams and the related processes like x-ray production, REC, RTE and molecular orbital formation are under way. The following experiments have already been performed.
STUDY OF GOLD L X-RAYS IN Ni-Au
The production of L shell x-rays of gold from thin targets 20 gm/mg with 58-87 MeV Ni+5ion bombardment has been studied. The experimental chamber was modified to increase the detector - target solid angle considerably and to reduce the path between detector window and target. The well collimated detector gives very pure L x-ray spectrum free from background noise. Among the interesting features observed in the experiment are the peak height shift and the re-arrangements of intensity distribution among resolved peaks of X-rays. The estimate of multiple vacancy creation in some sub-shells of L shell has been made. The energy dependence of relative L shell X-ray intensities and absolute X-ray production cross-sections are also measured and compared with theory/other data wherever available.
STUDY OF K X-RAYS IN Cu-Cu SYSTEM
The production of K shell X-rays in Cu-Cu system at high projectile energy and charge state has been investigated. The symmetric molecular orbital effects and some interesting results have been observed. The charge state dependence of molecular orbital formation has also been explored.
DESIGN AND FABRICATION OF X-RAY DETECTION CHAMBER AT NUCLEAR SCIENCE CENTRE
The light ion beam room (LIBR) chamber at NSC has been modified to insert the Si(Li) detector to improve the solid angle of detection and to reduce the absorption of radiation in the path. This has been done by designing a flange with changeable polypropylene window and Aluminium collimator. A variety of experiments have now therefore become feasible at NSC in the area of Atomic Physics using low energy x-ray and photon detectors.
DESIGN AND DEVELOPMENT OF GAS FLOW POSITION SENSITIVE DETECTOR
The low cost, single wire gas flow proportional detectors have been designed , fabricated and tested for alpha particles as well as x-rays for their performance of position sensitivity and resolution. These detectors have shown the resolution of better than 19% at 5.9 keV photon energy and the position sensitivity of 0.4 mm. These characteristics are comparable with the commercially available detectors. The efforts to further improve upon these characteristics are on.
MOLECULAR ORBITAL FORMATION AND MO X-RAY EMISSION IN ION ATOM COLLISIONS.
The molecular orbital K- shell x-rays were studied from the ion excited atom of copper in the copper-copper system. The copper ions with various charge states were obtained from the Pelletron at Nuclear Science Centre
CALIBRATION AND OTHER PROPERTIES OF SOLID STATE DETECTORS.
The gas flow position sensitive detector designed and fabricated at JNU is further being improved to provide indigenous substitute. The prototypes were fabricated at USIC JNU and were installed and tested at Nuclear Science Centre New Delhi. The performance of the detector has been evaluated in real working conditions and the characteristics were found to be near desirable. Some other new designs of detectors are under development for complex experiments.
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