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MIT-5A116

PHOTOINTERRUPTER

The MIT-5A116 consists of a Gallium Arsenide infrared emitting diode and a NPN phototransistor built in a black plastic housing

 

[Under Construction]

Part Number Device Description Electrical & Optical Characteristics
Package Slit Width (mm)  

Detector & Emitter Gap (mm)

 

Input IR Output Phototransistor

 Coupled

Forward Voltage VF(V) @ IF = 20mA

Collector Dark Current Iceo (nA) @ Vce = 10V  

Stauration Voltage Vce(sat)(V) @ IC = 0.1mA Vce = 5V

 

On-State Collector Current IC(on)(mA) @Vce = 5V   IF = 20mA
Typ. Max. Max. Min.
MIT-5A116 Transmissive 0.5 5 1.2 100 0.4 0.4

 

Datasheet

 

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Last modified: 08/18/03